IRFL9110TRPBF Todos los transistores

 

IRFL9110TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFL9110TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 17.5 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2(typ) Ohm
   Paquete / Cubierta: SOT223

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IRFL9110TRPBF Datasheet (PDF)

 ..1. Size:894K  cn vbsemi
irfl9110trpbf.pdf

IRFL9110TRPBF
IRFL9110TRPBF

IRFL9110TRPBFwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Application

 6.1. Size:171K  international rectifier
irfl9110.pdf

IRFL9110TRPBF
IRFL9110TRPBF

 6.2. Size:225K  international rectifier
irfl9110pbf.pdf

IRFL9110TRPBF
IRFL9110TRPBF

PD - 95320IRFL9110PbFHEXFET Power MOSFET Surface Mount Available in Tape & Reel DVDSS = -100V Dynamic dv/dt Rating Repetitive Avalanche Rated P-ChannelRDS(on) = 1.2 Fast SwitchingG Ease of Paralleling Lead-FreeID = -1.1ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rugg

 6.3. Size:1443K  vishay
irfl9110 sihfl9110.pdf

IRFL9110TRPBF
IRFL9110TRPBF

IRFL9110, SiHFL9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and ReelQg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche RatedQgd (nC) 4.1 P-Channel Fast SwitchingConfiguration Single

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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