IRFL9110TRPBF MOSFET Datasheet: P-Ch, 100V, 2A. Full specification with pinout and replacement list

IRFL9110TRPBF Specs and Replacement

Type Designator: IRFL9110TRPBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 typ Ohm

Package: SOT223

IRFL9110TRPBF substitution

- MOSFET ⓘ Cross-Reference Search

IRFL9110TRPBF datasheet

..1. Size:894K cn vbsemi
irfl9110trpbf.pdf pdf_icon

IRFL9110TRPBF www.VBsemi.tw P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100% Rg and UIS Tested 0.200 at VGS = - 10 V - 3.0 - 100 13.2 nC 0.230 at VGS = - 6 V - 2.4 APPLICATIONS Available Active Clamp in Intermediate DC/ DC Power Supplies S H-Bridge High Side Switch for Lighting Application ... See More ⇒

6.1. Size:171K international rectifier
irfl9110.pdf pdf_icon

... See More ⇒

6.2. Size:225K international rectifier
irfl9110pbf.pdf pdf_icon

PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel D VDSS = -100V Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel RDS(on) = 1.2 Fast Switching G Ease of Paralleling Lead-Free ID = -1.1A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rugg... See More ⇒

6.3. Size:1443K vishay
irfl9110 sihfl9110.pdf pdf_icon