IRFL9110TRPBF Datasheet and Replacement
Type Designator: IRFL9110TRPBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 51 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2(typ) Ohm
Package: SOT223
IRFL9110TRPBF substitution
IRFL9110TRPBF Datasheet (PDF)
irfl9110trpbf.pdf

IRFL9110TRPBFwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Application
irfl9110pbf.pdf

PD - 95320IRFL9110PbFHEXFET Power MOSFET Surface Mount Available in Tape & Reel DVDSS = -100V Dynamic dv/dt Rating Repetitive Avalanche Rated P-ChannelRDS(on) = 1.2 Fast SwitchingG Ease of Paralleling Lead-FreeID = -1.1ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rugg
irfl9110 sihfl9110.pdf

IRFL9110, SiHFL9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and ReelQg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche RatedQgd (nC) 4.1 P-Channel Fast SwitchingConfiguration Single
Datasheet: IRFBC30P , IRFH3702TR , IRFI9540GP , IRFIZ24GP , IRFL110TR , IRFL210TRPBF , IRFL4310TR , IRFL9014TRPBF , 12N60 , IRFR024NTR , IRFR110TR , IRFR1205TR , IRFR120NTRPBF , IRFR120TR , IRFR13N15DTR , IRFR13N20DTR , IRFR15N20DTR .
History: R6007JND3
Keywords - IRFL9110TRPBF MOSFET datasheet
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IRFL9110TRPBF replacement
History: R6007JND3



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