IRFR024NTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFR024NTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mot

PD- 9.1336AIRFR/U024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process TechnologyRDS(on) = 0.075G Fast Switching Fully Avalanche RatedID = 17A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possi

PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform

AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRFR024NPBFFEATURESDrain Current I =17A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max)@V =10VDS(on) GSHigh density cell design for ultra low RdsonFully characterized avalanche voltage and currentMinimum Lot-to-Lot variations for robust deviceperform