IRFR024NTR - описание и поиск аналогов

IRFR024NTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mot

PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi

PD - 95066A IRFR024NPbF IRFU024NPbF Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform

AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175 C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRFR024NPBF FEATURES Drain Current I =17A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R =75m (Max)@V =10V DS(on) GS High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Minimum Lot-to-Lot variations for robust device perform