IRFR2307ZTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR2307ZTR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 136.4 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 230 pF
Resistencia entre drenaje y fuente RDS(on): 0.0185 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET IRFR2307ZTR
IRFR2307ZTR Datasheet (PDF)
irfr2307ztr.pdf
IRFR2307ZTRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth
auirfr2307ztr.pdf
PD - 97546AUTOMOTIVE GRADEAUIRFR2307ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS 75V 175C Operating TemperatureRDS(on) max.16m Fast Switching Repetitive Avalanche Allowed up to Tjmax GID (Silicon Limited) 53A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Qualified *Desc
irfr2307zpbf irfu2307zpbf.pdf
PD - 96191BIRFR2307ZPbFIRFU2307ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resi
irfr2307zpbf irfu2307zpbf.pdf
PD - 96191BIRFR2307ZPbFIRFU2307ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resi
auirfr2307z.pdf
AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri
irfr2307z.pdf
isc N-Channel MOSFET Transistor IRFR2307Z, IIRFR2307ZFEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 V
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
