Справочник MOSFET. IRFR2307ZTR

 

IRFR2307ZTR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR2307ZTR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 136.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 38 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0185 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRFR2307ZTR

 

 

IRFR2307ZTR Datasheet (PDF)

 ..1. Size:1484K  cn vbsemi
 irfr2307ztr.pdf

IRFR2307ZTR IRFR2307ZTR

IRFR2307ZTRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth

 0.1. Size:298K  international rectifier
 auirfr2307ztr.pdf

IRFR2307ZTR IRFR2307ZTR

PD - 97546AUTOMOTIVE GRADEAUIRFR2307ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS 75V 175C Operating TemperatureRDS(on) max.16m Fast Switching Repetitive Avalanche Allowed up to Tjmax GID (Silicon Limited) 53A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Qualified *Desc

 5.1. Size:352K  international rectifier
 irfr2307zpbf irfu2307zpbf.pdf

IRFR2307ZTR IRFR2307ZTR

PD - 96191BIRFR2307ZPbFIRFU2307ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resi

 5.2. Size:352K  infineon
 irfr2307zpbf irfu2307zpbf.pdf

IRFR2307ZTR IRFR2307ZTR

PD - 96191BIRFR2307ZPbFIRFU2307ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resi

 5.3. Size:678K  infineon
 auirfr2307z.pdf

IRFR2307ZTR IRFR2307ZTR

AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri

 5.4. Size:241K  inchange semiconductor
 irfr2307z.pdf

IRFR2307ZTR IRFR2307ZTR

isc N-Channel MOSFET Transistor IRFR2307Z, IIRFR2307ZFEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 V

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