IRFR310T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR310T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 48(max) nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 177 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET IRFR310T

IRFR310T Datasheet (PDF)

..1. Size:1561K cn vbsemi
irfr310t.pdf

IRFR310Twww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

7.1. Size:210K 1
irfu310a irfr310a.pdf

7.2. Size:1830K international rectifier
irfr310pbf irfu310pbf.pdf

PD - 95028AIRFR310PbFIRFU310PbF Lead-Free12/10/04Document Number: 91272 www.vishay.com1IRFR/U310PbFDocument Number: 91272 www.vishay.com2IRFR/U310PbFDocument Number: 91272 www.vishay.com3IRFR/U310PbFDocument Number: 91272 www.vishay.com4IRFR/U310PbFDocument Number: 91272 www.vishay.com5IRFR/U310PbFDocument Number: 91272 www.vishay.com6IRFR/U3

7.3. Size:173K international rectifier
irfr310.pdf

7.4. Size:501K samsung
irfr310a.pdf

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

7.5. Size:818K vishay
irfr310pbf irfu310pbf sihfr310 sihfu310.pdf

IRFR310, IRFU310, SiHFR310, SiHFU310www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310)Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast SwitchingQgd (nC) 6.5 Ful

7.6. Size:1412K vishay
irfr310 irfu310 sihfr310 sihfu310.pdf

IRFR310, IRFU310, SiHFR310, SiHFU310Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* Surface Mount (IRFR310/SiHFR310)Qg (Max.) (nC) 12COMPLIANT Straight Lead (IRFU310/SiHFU310)Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5Configuration S

7.7. Size:2516K cn vbsemi
irfr310p.pdf

IRFR310Pwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

7.8. Size:288K inchange semiconductor
irfr310.pdf

iscN-Channel MOSFET Transistor IRFR310FEATURESLow drain-source on-resistance:RDS(ON) 3.6 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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