All MOSFET. IRFR310T Datasheet

 

IRFR310T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFR310T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48(max) nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO252

 IRFR310T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR310T Datasheet (PDF)

 ..1. Size:1561K  cn vbsemi
irfr310t.pdf

IRFR310T
IRFR310T

IRFR310Twww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

 7.1. Size:210K  1
irfu310a irfr310a.pdf

IRFR310T
IRFR310T

 7.2. Size:1830K  international rectifier
irfr310pbf irfu310pbf.pdf

IRFR310T
IRFR310T

PD - 95028AIRFR310PbFIRFU310PbF Lead-Free12/10/04Document Number: 91272 www.vishay.com1IRFR/U310PbFDocument Number: 91272 www.vishay.com2IRFR/U310PbFDocument Number: 91272 www.vishay.com3IRFR/U310PbFDocument Number: 91272 www.vishay.com4IRFR/U310PbFDocument Number: 91272 www.vishay.com5IRFR/U310PbFDocument Number: 91272 www.vishay.com6IRFR/U3

 7.3. Size:173K  international rectifier
irfr310.pdf

IRFR310T
IRFR310T

 7.4. Size:501K  samsung
irfr310a.pdf

IRFR310T
IRFR310T

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 7.5. Size:818K  vishay
irfr310pbf irfu310pbf sihfr310 sihfu310.pdf

IRFR310T
IRFR310T

IRFR310, IRFU310, SiHFR310, SiHFU310www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310)Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast SwitchingQgd (nC) 6.5 Ful

 7.6. Size:1412K  vishay
irfr310 irfu310 sihfr310 sihfu310.pdf

IRFR310T
IRFR310T

IRFR310, IRFU310, SiHFR310, SiHFU310Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* Surface Mount (IRFR310/SiHFR310)Qg (Max.) (nC) 12COMPLIANT Straight Lead (IRFU310/SiHFU310)Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5Configuration S

 7.7. Size:2516K  cn vbsemi
irfr310p.pdf

IRFR310T
IRFR310T

IRFR310Pwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

 7.8. Size:288K  inchange semiconductor
irfr310.pdf

IRFR310T
IRFR310T

iscN-Channel MOSFET Transistor IRFR310FEATURESLow drain-source on-resistance:RDS(ON) 3.6 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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