IRFR3410TR Todos los transistores

 

IRFR3410TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR3410TR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 typ Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de IRFR3410TR MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFR3410TR datasheet

 ..1. Size:822K  cn vbsemi
 irfr3410tr.pdf pdf_icon

IRFR3410TR

IRFR3410TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

 6.1. Size:140K  international rectifier
 irfr3410.pdf pdf_icon

IRFR3410TR

PD - 94505 IRFR3410 IRFU3410 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3410 IRFU

 6.2. Size:231K  international rectifier
 irfr3410pbf irfu3410pbf.pdf pdf_icon

IRFR3410TR

PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Cu

 6.3. Size:1054K  cn evvo
 irfr3410.pdf pdf_icon

IRFR3410TR

IRFR3410 N-Channel Enhancement Mode MOSFET Description The IRFR3410 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This D S device is suitable for use as a G Battery protection or in other Switching application. TO-252-2L General Features V = 100V I = 30A DS D PIN2 D R

MOSTRAR MÁS

Otros transistores... IRFR120NTRPBF , IRFR120TR , IRFR13N15DTR , IRFR13N20DTR , IRFR15N20DTR , IRFR2307ZTR , IRFR310P , IRFR310T , 13N50 , IRFR3411TR , IRFR3707ZTR , IRFR3708TR , IRFR3709ZCT , IRFR3709ZT , IRFR3709ZTR , IRFR3710ZTR , IRFR3910TR .

History: IRFR13N20DTR | AP2304AGN | SM1C01NSF | IRFR5505TR

 

 

 

 

↑ Back to Top
.