IRFR3411TR Todos los transistores

 

IRFR3411TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR3411TR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03(typ) Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de IRFR3411TR MOSFET

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IRFR3411TR datasheet

 ..1. Size:1455K  cn vbsemi
 irfr3411tr.pdf pdf_icon

IRFR3411TR

IRFR3411TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

 6.1. Size:230K  international rectifier
 irfr3411pbf irfu3411pbf.pdf pdf_icon

IRFR3411TR

PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to

 6.2. Size:287K  international rectifier
 irfr3411pbf.pdf pdf_icon

IRFR3411TR

PD - 95371B IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to

 6.3. Size:112K  international rectifier
 irfr3411.pdf pdf_icon

IRFR3411TR

PD - 94393 IRFR3411 IRFU3411 Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 100V 175 C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to achieve extremely low on-

MOSTRAR MÁS

Otros transistores... IRFR120TR , IRFR13N15DTR , IRFR13N20DTR , IRFR15N20DTR , IRFR2307ZTR , IRFR310P , IRFR310T , IRFR3410TR , AON7410 , IRFR3707ZTR , IRFR3708TR , IRFR3709ZCT , IRFR3709ZT , IRFR3709ZTR , IRFR3710ZTR , IRFR3910TR , IRFR4104TRPBF .

History: AGM065N10D | NVB5860N | CEB18N5 | BUZ73A | P4402FAG | SI4668DY | 2SJ527

 

 
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