IRFR3411TR PDF and Equivalents Search

 

IRFR3411TR Specs and Replacement


   Type Designator: IRFR3411TR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03(typ) Ohm
   Package: TO252
 

 IRFR3411TR substitution

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IRFR3411TR datasheet

 ..1. Size:1455K  cn vbsemi
 irfr3411tr.pdf pdf_icon

IRFR3411TR

IRFR3411TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl... See More ⇒

 6.1. Size:230K  international rectifier
 irfr3411pbf irfu3411pbf.pdf pdf_icon

IRFR3411TR

PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to ... See More ⇒

 6.2. Size:287K  international rectifier
 irfr3411pbf.pdf pdf_icon

IRFR3411TR

PD - 95371B IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to ... See More ⇒

 6.3. Size:112K  international rectifier
 irfr3411.pdf pdf_icon

IRFR3411TR

PD - 94393 IRFR3411 IRFU3411 Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 100V 175 C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to achieve extremely low on-... See More ⇒

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Detailed specifications: IRFR120TR , IRFR13N15DTR , IRFR13N20DTR , IRFR15N20DTR , IRFR2307ZTR , IRFR310P , IRFR310T , IRFR3410TR , AON7410 , IRFR3707ZTR , IRFR3708TR , IRFR3709ZCT , IRFR3709ZT , IRFR3709ZTR , IRFR3710ZTR , IRFR3910TR , IRFR4104TRPBF .

History: P5506BDA | AO7403 | STN4346 | PJQ2888 | TK14C65W5 | AGM01P15E | AGM205D

Keywords - IRFR3411TR MOSFET specs

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