IRFR3710ZTR Todos los transistores

 

IRFR3710ZTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR3710ZTR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm
   Paquete / Cubierta: TO252
 

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IRFR3710ZTR Datasheet (PDF)

 ..1. Size:1482K  cn vbsemi
 irfr3710ztr.pdf pdf_icon

IRFR3710ZTR

IRFR3710ZTRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth

 0.1. Size:272K  international rectifier
 auirfr3710ztrl.pdf pdf_icon

IRFR3710ZTR

PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

 5.1. Size:359K  international rectifier
 irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf pdf_icon

IRFR3710ZTR

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro

 5.2. Size:359K  international rectifier
 irfr3710zpbf.pdf pdf_icon

IRFR3710ZTR

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro

MOSTRAR MÁS

Otros transistores... IRFR310T , IRFR3410TR , IRFR3411TR , IRFR3707ZTR , IRFR3708TR , IRFR3709ZCT , IRFR3709ZT , IRFR3709ZTR , AO4407 , IRFR3910TR , IRFR4104TRPBF , IRFR4105ZTR , IRFR420BTM , IRFR4510TR , IRFR4620TRPBF , IRFR48ZTR , IRFR5305TRPBF .

 

 
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