IRFR3710ZTR - описание и поиск аналогов

IRFR3710ZTR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro

PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

isc N-Channel MOSFET Transistor IRFR3710Z, IIRFR3710Z FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gat