IRFR3710ZTR - Даташиты. Аналоги. Основные параметры
Наименование производителя: IRFR3710ZTR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 136.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 230 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0185 Ohm
Тип корпуса: TO252
Аналог (замена) для IRFR3710ZTR
IRFR3710ZTR Datasheet (PDF)
irfr3710ztr.pdf

IRFR3710ZTRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth
auirfr3710ztrl.pdf

PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description
irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro
irfr3710zpbf.pdf

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro
Другие MOSFET... IRFR310T , IRFR3410TR , IRFR3411TR , IRFR3707ZTR , IRFR3708TR , IRFR3709ZCT , IRFR3709ZT , IRFR3709ZTR , STP80NF70 , IRFR3910TR , IRFR4104TRPBF , IRFR4105ZTR , IRFR420BTM , IRFR4510TR , IRFR4620TRPBF , IRFR48ZTR , IRFR5305TRPBF .
History: IXFA7N100P | DG4N65-TO220 | ME9435A-G | IRF9393 | FDA75N28
History: IXFA7N100P | DG4N65-TO220 | ME9435A-G | IRF9393 | FDA75N28



Список транзисторов
Обновления
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