IRFR3710ZTR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFR3710ZTR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 136.4 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 60 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 38 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 230 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0185 Ohm
Тип корпуса: TO252
Аналог (замена) для IRFR3710ZTR
IRFR3710ZTR Datasheet (PDF)
irfr3710ztr.pdf
IRFR3710ZTRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth
auirfr3710ztrl.pdf
PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description
irfr3710zpbf.pdf
PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro
irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf
PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro
auirfr3710z.pdf
PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description
irfr3710z.pdf
isc N-Channel MOSFET Transistor IRFR3710Z, IIRFR3710ZFEATURESStatic drain-source on-resistance:RDS(on)18mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gat
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