IRFR4104TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR4104TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 80 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
   Paquete / Cubierta: TO252

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IRFR4104TRPBF Datasheet (PDF)

..1. Size:1024K cn vbsemi
irfr4104trpbf.pdf

IRFR4104TRPBFwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMU

4.1. Size:317K international rectifier
auirfr4104tr.pdf

PD - 97452AAUIRFR4104AUTOMOTIVE GRADEAUIRFU4104HEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS 40V 175C Operating TemperatureRDS(on) max.5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)119A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Q

6.1. Size:324K international rectifier
irfr4104pbf irfu4104pbf.pdf

PD - 95425BIRFR4104PbFIRFU4104PbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 40Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on

6.2. Size:324K infineon
irfr4104pbf irfu4104pbf.pdf

6.3. Size:715K infineon
auirfr4104 auirfu4104.pdf

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

6.4. Size:241K inchange semiconductor
irfr4104.pdf

isc N-Channel MOSFET Transistor IRFR4104, IIRFR4104FEATURESStatic drain-source on-resistance:RDS(on)5.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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