Справочник MOSFET. IRFR4104TRPBF

 

IRFR4104TRPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR4104TRPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 312 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 85 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 80 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 550 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRFR4104TRPBF

 

 

IRFR4104TRPBF Datasheet (PDF)

 ..1. Size:1024K  cn vbsemi
 irfr4104trpbf.pdf

IRFR4104TRPBF IRFR4104TRPBF

IRFR4104TRPBFwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMU

 4.1. Size:317K  international rectifier
 auirfr4104tr.pdf

IRFR4104TRPBF IRFR4104TRPBF

PD - 97452AAUIRFR4104AUTOMOTIVE GRADEAUIRFU4104HEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS 40V 175C Operating TemperatureRDS(on) max.5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)119A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Q

 6.1. Size:324K  international rectifier
 irfr4104pbf irfu4104pbf.pdf

IRFR4104TRPBF IRFR4104TRPBF

PD - 95425BIRFR4104PbFIRFU4104PbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 40Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on

 6.2. Size:324K  infineon
 irfr4104pbf irfu4104pbf.pdf

IRFR4104TRPBF IRFR4104TRPBF

PD - 95425BIRFR4104PbFIRFU4104PbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 40Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on

 6.3. Size:715K  infineon
 auirfr4104 auirfu4104.pdf

IRFR4104TRPBF IRFR4104TRPBF

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 6.4. Size:241K  inchange semiconductor
 irfr4104.pdf

IRFR4104TRPBF IRFR4104TRPBF

isc N-Channel MOSFET Transistor IRFR4104, IIRFR4104FEATURESStatic drain-source on-resistance:RDS(on)5.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate

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