IRFR5410TR Todos los transistores

 

IRFR5410TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR5410TR
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.279 Ohm
   Paquete / Cubierta: TO251 TO252
 

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IRFR5410TR Datasheet (PDF)

 ..1. Size:3139K  cn vbsemi
 irfr5410tr.pdf pdf_icon

IRFR5410TR

IRFR5410TRwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

 0.1. Size:220K  international rectifier
 auirfr5410tr.pdf pdf_icon

IRFR5410TR

PD - 96344AUTOMOTIVE GRADEAUIRFR5410Features Advanced Planar TechnologyHEXFET Power MOSFET P-Channel MOSFETD Low On-ResistanceV(BR)DSS -100V Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.205G Fast SwitchingID-13A Fully Avalanche RatedS Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant

 6.1. Size:267K  international rectifier
 irfr5410pbf irfu5410pbf.pdf pdf_icon

IRFR5410TR

PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 6.2. Size:215K  international rectifier
 irfr5410.pdf pdf_icon

IRFR5410TR

PD - 9.1533AIRFR/U5410HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)RDS(on) = 0.205Wl Advanced Process TechnologyGl Fast SwitchingID = -13Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

MOSTRAR MÁS

Otros transistores... IRFR4104TRPBF , IRFR4105ZTR , IRFR420BTM , IRFR4510TR , IRFR4620TRPBF , IRFR48ZTR , IRFR5305TRPBF , IRFR540ZTRPBF , STF13NM60N , IRFR5505TR , IRFR9010TR , IRFR9014TR , IRFR9024NTRPBF , IRFR9024TR , IRFR9120NTRPBF , IRFU110P , IRFU120NP .

History: AS3434E | IRFR310P | NCE65T360I | BUK9Y4R4-40E | BUZ351 | XP151A13A0MR-G | 2SK1067

 

 
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