IRFR5410TR Todos los transistores

 ..1. Size:3139K  cn vbsemi
 irfr5410tr.pdf

 0.1. Size:220K  international rectifier
 auirfr5410tr.pdf

 6.1. Size:267K  international rectifier
 irfr5410pbf irfu5410pbf.pdf

PD -95314A IRFR5410PbF IRFU5410PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) l Advanced Process Technology RDS(on) = 0.205 G l Fast Switching l Fully Avalanche Rated ID = -13A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

 6.2. Size:215K  international rectifier
 irfr5410.pdf

PD - 9.1533A IRFR/U5410 HEXFET Power MOSFET l Ultra Low On-Resistance D l P-Channel VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) RDS(on) = 0.205W l Advanced Process Technology G l Fast Switching ID = -13A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 6.3. Size:318K  infineon
 auirfr5410.pdf

AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology VDSS -100V P-Channel MOSFET Low On-Resistance RDS(on) max. 0.205 Dynamic dV/dT Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Aut

 6.4. Size:247K  inchange semiconductor
 irfr5410.pdf

isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410 FEATURES Static drain-source on-resistance RDS(on) 205m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 C operating junction temperature ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol