IRFR5410TR MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR5410TR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 32.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23.2 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.279 Ohm
Package: TO251 TO252
IRFR5410TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR5410TR Datasheet (PDF)
irfr5410tr.pdf
IRFR5410TRwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch
auirfr5410tr.pdf
PD - 96344AUTOMOTIVE GRADEAUIRFR5410Features Advanced Planar TechnologyHEXFET Power MOSFET P-Channel MOSFETD Low On-ResistanceV(BR)DSS -100V Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.205G Fast SwitchingID-13A Fully Avalanche RatedS Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant
irfr5410pbf irfu5410pbf.pdf
PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech
irfr5410.pdf
PD - 9.1533AIRFR/U5410HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)RDS(on) = 0.205Wl Advanced Process TechnologyGl Fast SwitchingID = -13Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme
irfr5410pbf irfu5410pbf.pdf
PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech
auirfr5410.pdf
AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology VDSS -100V P-Channel MOSFET Low On-Resistance RDS(on) max. 0.205 Dynamic dV/dT Rating 175C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Aut
irfr5410.pdf
isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410FEATURESStatic drain-source on-resistance:RDS(on)205mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: UTT18P10G-TN3-R
