IRFR5410TR MOSFET Datasheet: P-Ch, 100V, 8.8A. Full specification with pinout and replacement list

IRFR5410TR Specs and Replacement

Type Designator: IRFR5410TR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.279 Ohm

Package: TO251 TO252

IRFR5410TR substitution

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IRFR5410TR datasheet

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PD -95314A IRFR5410PbF IRFU5410PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) l Advanced Process Technology RDS(on) = 0.205 G l Fast Switching l Fully Avalanche Rated ID = -13A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech... See More ⇒

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PD - 9.1533A IRFR/U5410 HEXFET Power MOSFET l Ultra Low On-Resistance D l P-Channel VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) RDS(on) = 0.205W l Advanced Process Technology G l Fast Switching ID = -13A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒