All MOSFET. IRFR5410TR Datasheet

 

IRFR5410TR Datasheet and Replacement


   Type Designator: IRFR5410TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.279 Ohm
   Package: TO251 TO252
 

 IRFR5410TR substitution

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IRFR5410TR Datasheet (PDF)

 ..1. Size:3139K  cn vbsemi
irfr5410tr.pdf pdf_icon

IRFR5410TR

IRFR5410TRwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

 0.1. Size:220K  international rectifier
auirfr5410tr.pdf pdf_icon

IRFR5410TR

PD - 96344AUTOMOTIVE GRADEAUIRFR5410Features Advanced Planar TechnologyHEXFET Power MOSFET P-Channel MOSFETD Low On-ResistanceV(BR)DSS -100V Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.205G Fast SwitchingID-13A Fully Avalanche RatedS Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant

 6.1. Size:267K  international rectifier
irfr5410pbf irfu5410pbf.pdf pdf_icon

IRFR5410TR

PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

 6.2. Size:215K  international rectifier
irfr5410.pdf pdf_icon

IRFR5410TR

PD - 9.1533AIRFR/U5410HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)RDS(on) = 0.205Wl Advanced Process TechnologyGl Fast SwitchingID = -13Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

Datasheet: IRFR4104TRPBF , IRFR4105ZTR , IRFR420BTM , IRFR4510TR , IRFR4620TRPBF , IRFR48ZTR , IRFR5305TRPBF , IRFR540ZTRPBF , STF13NM60N , IRFR5505TR , IRFR9010TR , IRFR9014TR , IRFR9024NTRPBF , IRFR9024TR , IRFR9120NTRPBF , IRFU110P , IRFU120NP .

History: WMQ55N04T1 | NCEP055N10G | IRF7324 | SIHA21N60EF | APT20M18B2VFR | IRLU2905Z | SRM7N65

Keywords - IRFR5410TR MOSFET datasheet

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