IRFR9024NTRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR9024NTRPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 34 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 0.061(typ) Ohm
Paquete / Cubierta: TO252
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IRFR9024NTRPBF Datasheet (PDF)
irfr9024ntrpbf.pdf
IRFR9024NTRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamete
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PD - 9.1506IRFR/U9024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR9024N) Straight Lead (IRFU9024N)RDS(on) = 0.175 Advanced Process TechnologyG Fast SwitchingID = -11A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
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AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian
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