IRFR9120NTRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR9120NTRPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 32.1 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 23.2 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 65 pF
Resistencia entre drenaje y fuente RDS(on): 0.279 Ohm
Paquete / Cubierta: TO251 TO252
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IRFR9120NTRPBF Datasheet (PDF)
irfr9120ntrpbf.pdf
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IRFR9120NTRPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switc
irfr9120npbf irfu9120npbf.pdf
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PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irfr9120n.pdf
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PD - 9.1507AIRFR/U9120NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N)RDS(on) = 0.48 Advanced Process TechnologyG Fast SwitchingID = -6.6A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
irfr9120npbf irfu9120npbf.pdf
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PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FR5505