IRFU110P Todos los transistores

 

IRFU110P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU110P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 16(max) nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2(typ) Ohm
   Paquete / Cubierta: TO251

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IRFU110P Datasheet (PDF)

 ..1. Size:848K  cn vbsemi
irfu110p.pdf

IRFU110P
IRFU110P

IRFU110Pwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 10 V 0.20 Available in Tape and ReelAvailableQg (Max.) (nC) 16 Dynamic dV/dt RatingQgs (nC) 4.4 Repetitive Avalanche RatedAvailableQgd (nC) 7.7 175 C Operating TemperatureConfiguration Single

 0.1. Size:1868K  international rectifier
irfr110pbf irfu110pbf.pdf

IRFU110P
IRFU110P

PD - 95026AIRFR110PbFIRFU110PbF Lead-Free12/14/04Document Number: 91265 www.vishay.com1IRFR/U110PbFDocument Number: 91265 www.vishay.com2IRFR/U110PbFDocument Number: 91265 www.vishay.com3IRFR/U110PbFDocument Number: 91265 www.vishay.com4IRFR/U110PbFDocument Number: 91265 www.vishay.com5IRFR/U110PbFDocument Number: 91265 www.vishay.com6IRFR/U1

 0.2. Size:1337K  vishay
irfu110pbf sihfu110.pdf

IRFU110P
IRFU110P

IRFU110, SiHFU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 10 V 0.54 Straight Lead Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt RatingQgs (nC) 2.3 Repetitive Avalanche RatedQgd (nC) 3.8 Fast SwitchingConfiguration Single Ease of Parallel

 7.1. Size:282K  1
irfr110 irfu110.pdf

IRFU110P
IRFU110P

 7.2. Size:255K  fairchild semi
irfr110a irfu110a.pdf

IRFU110P
IRFU110P

IRFR/U110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maxim

 7.3. Size:1341K  vishay
irfu110 sihfu110.pdf

IRFU110P
IRFU110P

IRFU110, SiHFU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 10 V 0.54 Straight Lead Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt RatingQgs (nC) 2.3 Repetitive Avalanche RatedQgd (nC) 3.8 Fast SwitchingConfiguration Single Ease of Parallel

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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