All MOSFET. IRFU110P Datasheet

 

IRFU110P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFU110P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16(max) nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2(typ) Ohm
   Package: TO251

 IRFU110P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFU110P Datasheet (PDF)

 ..1. Size:848K  cn vbsemi
 irfu110p.pdf

IRFU110P IRFU110P

IRFU110Pwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 10 V 0.20 Available in Tape and ReelAvailableQg (Max.) (nC) 16 Dynamic dV/dt RatingQgs (nC) 4.4 Repetitive Avalanche RatedAvailableQgd (nC) 7.7 175 C Operating TemperatureConfiguration Single

 0.1. Size:1868K  international rectifier
 irfr110pbf irfu110pbf.pdf

IRFU110P IRFU110P

PD - 95026AIRFR110PbFIRFU110PbF Lead-Free12/14/04Document Number: 91265 www.vishay.com1IRFR/U110PbFDocument Number: 91265 www.vishay.com2IRFR/U110PbFDocument Number: 91265 www.vishay.com3IRFR/U110PbFDocument Number: 91265 www.vishay.com4IRFR/U110PbFDocument Number: 91265 www.vishay.com5IRFR/U110PbFDocument Number: 91265 www.vishay.com6IRFR/U1

 0.2. Size:1337K  vishay
 irfu110pbf sihfu110.pdf

IRFU110P IRFU110P

IRFU110, SiHFU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 10 V 0.54 Straight Lead Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt RatingQgs (nC) 2.3 Repetitive Avalanche RatedQgd (nC) 3.8 Fast SwitchingConfiguration Single Ease of Parallel

 7.1. Size:282K  1
 irfr110 irfu110.pdf

IRFU110P IRFU110P

 7.2. Size:255K  fairchild semi
 irfr110a irfu110a.pdf

IRFU110P IRFU110P

IRFR/U110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maxim

 7.3. Size:1341K  vishay
 irfu110 sihfu110.pdf

IRFU110P IRFU110P

IRFU110, SiHFU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 10 V 0.54 Straight Lead Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt RatingQgs (nC) 2.3 Repetitive Avalanche RatedQgd (nC) 3.8 Fast SwitchingConfiguration Single Ease of Parallel

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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