IRFU3410P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFU3410Pwww.VBsemi.twwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.036 at VGS = 10 V35 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDGSG D SN-Channel MOSFETTop View

PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu

isc N-Channel MOSFET Transistor IRFU3410FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

PD - 95371AIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

PD - 95516AIRFR3418PbF IRFU3418PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) Max IDl High frequency DC-DC convertersl Lead-Free 14m 30A80VBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Current

PD - 95498AIRFR3412PbFIRFU3412PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS) VDSS RDS(on) max IDl Motor Drive100V 0.025 48Al Bridge Convertersl All Zero Voltage Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness D-Pak I-Pakl Fully Cha

isc N-Channel MOSFET Transistor IRFU3411FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN