IRFU3410P PDF and Equivalents Search

 

IRFU3410P Specs and Replacement

Type Designator: IRFU3410P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 typ Ohm

Package: TO251

IRFU3410P substitution

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IRFU3410P datasheet

 ..1. Size:842K  cn vbsemi
irfu3410p.pdf pdf_icon

IRFU3410P

IRFU3410P www.VBsemi.tw www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.036 at VGS = 10 V 35 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View ... See More ⇒

 0.1. Size:231K  international rectifier
irfr3410pbf irfu3410pbf.pdf pdf_icon

IRFU3410P

PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Cu... See More ⇒

 6.1. Size:261K  inchange semiconductor
irfu3410.pdf pdf_icon

IRFU3410P

isc N-Channel MOSFET Transistor IRFU3410 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

 7.1. Size:230K  international rectifier
irfr3411pbf irfu3411pbf.pdf pdf_icon

IRFU3410P

PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to ... See More ⇒

Detailed specifications: IRFR5505TR, IRFR9010TR, IRFR9014TR, IRFR9024NTRPBF, IRFR9024TR, IRFR9120NTRPBF, IRFU110P, IRFU120NP, 20N50, IRFU3505P, IRFU3910P, IRFU430AP, IRFU4615P, IRFZ34NP, IRFZ34NSTR, IRFZ44RP, IRFZ44VP

Keywords - IRFU3410P MOSFET specs

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