IRFZ48RSP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ48RSP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 470 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0123(typ) Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IRFZ48RSP MOSFET
IRFZ48RSP Datasheet (PDF)
irfz48rsp.pdf

IRFZ48RSPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc
irfz48rspbf irfz48rlpbf.pdf

PD - 95761IRFZ48RSPbFIRFZ48RLPbFl Advanced Process Technology HEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.018l Drop in Replacement of the IRFZ48Gfor Linear/Audio ApplicationsID = 50*Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier
irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si
irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si
Otros transistores... IRFU3910P , IRFU430AP , IRFU4615P , IRFZ34NP , IRFZ34NSTR , IRFZ44RP , IRFZ44VP , IRFZ48NP , IRF730 , IRL520NP , IRLB8721P , IRLI3615P , IRLI3803P , IRLL014NTR , IRLL024NTR , IRLL024ZTR , IRLL2705TR .
History: QM0005D | WML10N60C4 | STH410N4F7-2AG | SWD4N65DA | SP8006 | WMM15N65C2 | WPM3012
History: QM0005D | WML10N60C4 | STH410N4F7-2AG | SWD4N65DA | SP8006 | WMM15N65C2 | WPM3012



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
tta004b | 2sc1116 | 2n3565 equivalent | 10n60 | 2sc1061 | a1023 | d313 transistor | 2sa1302