IRLL024ZTR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLL024ZTR  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 typ Ohm

Encapsulados: SOT223

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IRLL024ZTR datasheet

 ..1. Size:1437K  cn vbsemi
 irll024ztr.pdf pdf_icon

IRLL024ZTR

IRLL024ZTR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET AB

 6.1. Size:273K  international rectifier
 irll024z.pdf pdf_icon

IRLL024ZTR

PD - 95886A IRLL024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 60m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 5.0A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processi

 6.2. Size:265K  international rectifier
 irll024zpbf.pdf pdf_icon

IRLL024ZTR

PD - 95990A IRLL024ZPbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 60m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 5.0A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance

 6.3. Size:228K  international rectifier
 auirll024z.pdf pdf_icon

IRLL024ZTR

PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 150 C Operating Temperature RDS(on) typ. 48m Fast Switching G max. 60m Repetitive Avalanche Allowed up to Tjmax S ID 5.0A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

MOSTRAR MÁS

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