IRLL024ZTR Todos los transistores

 

IRLL024ZTR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLL024ZTR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(typ) Ohm
   Paquete / Cubierta: SOT223
 

 Búsqueda de reemplazo de IRLL024ZTR MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRLL024ZTR datasheet

 ..1. Size:1437K  cn vbsemi
 irll024ztr.pdf pdf_icon

IRLL024ZTR

IRLL024ZTR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET AB

 6.1. Size:273K  international rectifier
 irll024z.pdf pdf_icon

IRLL024ZTR

PD - 95886A IRLL024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 60m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 5.0A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processi

 6.2. Size:265K  international rectifier
 irll024zpbf.pdf pdf_icon

IRLL024ZTR

PD - 95990A IRLL024ZPbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 60m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 5.0A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance

 6.3. Size:228K  international rectifier
 auirll024z.pdf pdf_icon

IRLL024ZTR

PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 150 C Operating Temperature RDS(on) typ. 48m Fast Switching G max. 60m Repetitive Avalanche Allowed up to Tjmax S ID 5.0A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

MOSTRAR MÁS

Otros transistores... IRFZ48NP , IRFZ48RSP , IRL520NP , IRLB8721P , IRLI3615P , IRLI3803P , IRLL014NTR , IRLL024NTR , IRLB3034 , IRLL2705TR , IRLM2502TR , IRLML0030TR , IRLML2030TR , IRLML2060TR , IRLML2402TRPBF , IRLML2502G , IRLML2803TRPBF .

History: AGM1095MAP | SML5020BN

 

 
Back to Top

 


 
.