IRLL024ZTR MOSFET Datasheet: N-Ch, 60V, 6A. Full specification with pinout and replacement list

IRLL024ZTR Specs and Replacement

Type Designator: IRLL024ZTR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 typ Ohm

Package: SOT223

IRLL024ZTR substitution

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IRLL024ZTR datasheet

..1. Size:1437K cn vbsemi
irll024ztr.pdf pdf_icon

IRLL024ZTR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET AB... See More ⇒

6.1. Size:273K international rectifier
irll024z.pdf pdf_icon

PD - 95886A IRLL024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 60m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 5.0A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processi... See More ⇒

6.2. Size:265K international rectifier
irll024zpbf.pdf pdf_icon

PD - 95990A IRLL024ZPbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150 C Operating Temperature RDS(on) = 60m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 5.0A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance ... See More ⇒

6.3. Size:228K international rectifier
auirll024z.pdf pdf_icon

PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 150 C Operating Temperature RDS(on) typ. 48m Fast Switching G max. 60m Repetitive Avalanche Allowed up to Tjmax S ID 5.0A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de... See More ⇒