IRLL024ZTR MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLL024ZTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 10 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028(typ) Ohm
Package: SOT223
IRLL024ZTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLL024ZTR Datasheet (PDF)
irll024ztr.pdf
IRLL024ZTRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB
irll024z.pdf
PD - 95886AIRLL024ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 60ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 5.0ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes the latest processi
irll024zpbf.pdf
PD - 95990AIRLL024ZPbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 60ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 5.0ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance
auirll024z.pdf
PD - 97762AUTOMOTIVE GRADEAUIRLL024ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS55V Ultra Low On-Resistance 150C Operating TemperatureRDS(on) typ.48m Fast SwitchingG max. 60m Repetitive Avalanche Allowed up toTjmax SID5.0A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de
auirll024z.pdf
AUTOMOTIVE GRADE AUIRLL024Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) typ. Logic Level Gate Drive 48m 150C Operating Temperature max. 60m Fast Switching ID 5.0A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Des
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