IRLML2060TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLML2060TR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.09 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 4.2 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET IRLML2060TR

IRLML2060TR Datasheet (PDF)

..1. Size:199K international rectifier
irlml2060trpbf.pdf

PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie

..2. Size:199K infineon
irlml2060trpbf.pdf

..3. Size:1270K cn vbsemi
irlml2060tr.pdf

IRLML2060TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)

5.1. Size:218K international rectifier
irlml2060pbf.pdf

7.1. Size:266K international rectifier
irlml2030pbf.pdf

PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in

7.2. Size:259K international rectifier
irlml2030trpbf.pdf

7.3. Size:266K infineon
irlml2030trpbf.pdf

7.4. Size:161K tysemi
irlml2030trpbf.pdf

Product specificationIRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques

7.5. Size:836K cn vbsemi
irlml2030tr.pdf

IRLML2030TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: