IRLML2060TR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLML2060TR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.09 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 4.2 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 22 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
Тип корпуса: SOT23
Аналог (замена) для IRLML2060TR
IRLML2060TR Datasheet (PDF)
irlml2060trpbf.pdf
PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml2060trpbf.pdf
PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml2060tr.pdf
IRLML2060TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)
irlml2060pbf.pdf
PD - 97448AIRLML2060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 480 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)640 mIRLML2060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsFeatures BenefitsIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml2030pbf.pdf
PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in
irlml2030trpbf.pdf
PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in
irlml2030trpbf.pdf
PD - 97432IRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in
irlml2030trpbf.pdf
Product specificationIRLML2030TRPbFHEXFET Power MOSFETVDS30 VVGS Max G 1 20 VRDS(on) max 3 D100 m(@VGS = 10V)RDS(on) max 2SMicro3TM (SOT-23)154 mIRLML2030TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques
irlml2030tr.pdf
IRLML2030TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
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Список транзисторов
Обновления
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