IRLML2502G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLML2502G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 105 pF
Resistencia entre drenaje y fuente RDS(on): 0.028(typ) Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET IRLML2502G
IRLML2502G Datasheet (PDF)
irlml2502gpbf.pdf
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IRLML2502Gwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con
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irlml2502pbf-1.pdf
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irlml2502pbf.pdf
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irlml2502pbf.pdf
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SMD Type MOSFETN-Channel MOSFETIRLML2502 (KRLML2502)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 4.2 A1 2 RDS(ON) 45m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.1 RDS(ON) 80m (VGS = 2.5V)1.9 -0.1 Fast Switching1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25
irlml2502-3.pdf
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irlml2502.pdf
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irlml2502trpbf.pdf
IRLML2502TRPBFwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
irfirlml2502trpbf.pdf
isc N-Channel MOSFET Transistor IRFIRLML2502TRPBFFEATURESLow drain-source on-resistance:RDS(on) 45mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvides the designer with an extremely efficient and reliabledevice for use in battery and load management.ABSOLUTE MAXIM
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