IRLML2502G MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLML2502G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028(typ) Ohm
Package: SOT23
IRLML2502G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLML2502G Datasheet (PDF)
irlml2502gpbf.pdf
PD - 96163AIRLML2502GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
irlml2502g.pdf
IRLML2502Gwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con
irlml2502.pdf
PD - 93757BIRLML2502HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFETG 1 SOT-23 FootprintVDSS = 20V Low Profile (
irlml2502trpbf.pdf
IRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
irlml2502pbf-1.pdf
IRLML2502PbF-1HEXFET Power MOSFETVDS 20 VRDS(on) max G 10.045 (@V = 4.5V)GSQg (typical) 8.0 nC 3 DID 4.2 AS 2(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL
irlml2502pbf.pdf
IRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
irlml2502pbf.pdf
IRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
irlml2502.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2502 Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
irlml2502.pdf
Product specificationIRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
irlml2502.pdf
SMD Type MOSFETN-Channel MOSFETIRLML2502 (KRLML2502)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 4.2 A1 2 RDS(ON) 45m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.1 RDS(ON) 80m (VGS = 2.5V)1.9 -0.1 Fast Switching1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25
irlml2502-3.pdf
SMD Type MOSFETN-Channel MOSFETIRLML2502 (KRLML2502)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 4.2 A RDS(ON) 45m (VGS = 4.5V)1 2+0.02+0.1 RDS(ON) 80m (VGS = 2.5V) 0.15 -0.020.95 -0.1+0.11.9 -0.2 Fast Switching1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25
irlml2502.pdf
RUMWUMW IRLML2502UMW IRLML2502UMW IRLML2502SOT-23 Plastic-Encapsulate MOSFETSN-Channel 20-V(D-S) MOSFET UMW IRLML2502ID SOT-23 V(BR)DSS RDS(on)MAX 45m@4.5V20V4.2A1. GATE 80 m@2.5V2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 1G MKMaximum ratin
irlml2502.pdf
IRLML2502 N-Ch 20V Fast Switching MOSFETs Product Summary Description The IRLML2502 is the high cell density VDS 20 V trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the RDS(ON),typ 30 m small power switching and load switch ID 3.6 A applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliabili
irlml2502.pdf
IRLML2502N-Channel Enhancement-Mode MOSFETRoHS Device Halogen Free SOT-23 Featuresl Ultra Low On-ResistancelN-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (
irlml2502trpbf.pdf
IRLML2502TRPBFwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
irfirlml2502trpbf.pdf
isc N-Channel MOSFET Transistor IRFIRLML2502TRPBFFEATURESLow drain-source on-resistance:RDS(on) 45mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvides the designer with an extremely efficient and reliabledevice for use in battery and load management.ABSOLUTE MAXIM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
