IRLML6344GT Todos los transistores

 

IRLML6344GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLML6344GT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.1 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 5.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 4.5 nC
   Tiempo de subida (tr): 50 nS
   Conductancia de drenaje-sustrato (Cd): 45 pF
   Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
   Paquete / Cubierta: SOT23

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IRLML6344GT Datasheet (PDF)

 ..1. Size:1507K  cn vbsemi
irlml6344gt.pdf

IRLML6344GT
IRLML6344GT

IRLML6344GTwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 5.1. Size:221K  international rectifier
irlml6344pbf.pdf

IRLML6344GT
IRLML6344GT

IRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

 5.2. Size:205K  international rectifier
irlml6344trpbf.pdf

IRLML6344GT
IRLML6344GT

IRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

 5.3. Size:205K  infineon
irlml6344trpbf.pdf

IRLML6344GT
IRLML6344GT

IRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

 5.4. Size:145K  tysemi
irlml6344.pdf

IRLML6344GT
IRLML6344GT

Product specificationIRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

 5.5. Size:837K  cn vbsemi
irlml6344tr.pdf

IRLML6344GT
IRLML6344GT

IRLML6344TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

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