IRLML6344GT MOSFET Datasheet: N-Ch, 30V, 5.3A. Full specification with pinout and replacement list

IRLML6344GT Specs and Replacement

Type Designator: IRLML6344GT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

IRLML6344GT substitution

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IRLML6344GT datasheet

..1. Size:1507K cn vbsemi
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IRLML6344GT www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)... See More ⇒

5.1. Size:221K international rectifier
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IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V G 1 VGS Max 12 V RDS(on) max 3 D 29 m (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 m IRLML6344TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Benefits Low RDSon (... See More ⇒

5.2. Size:205K international rectifier
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5.3. Size:145K tysemi
irlml6344.pdf pdf_icon

Product specification IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V G 1 VGS Max 12 V RDS(on) max 3 D 29 m (@VGS = 4.5V) S 2 Micro3TM (SOT-23) RDS(on) max 37 m IRLML6344TRPbF (@VGS = 2.5V) Application(s) Load/ System Switch Features and Benefits Benefits Low RDSon (... See More ⇒