All MOSFET. IRLML6344GT Datasheet

 

IRLML6344GT MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLML6344GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23

 IRLML6344GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLML6344GT Datasheet (PDF)

 ..1. Size:1507K  cn vbsemi
irlml6344gt.pdf

IRLML6344GT
IRLML6344GT

IRLML6344GTwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 5.1. Size:221K  international rectifier
irlml6344pbf.pdf

IRLML6344GT
IRLML6344GT

IRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

 5.2. Size:205K  international rectifier
irlml6344trpbf.pdf

IRLML6344GT
IRLML6344GT

IRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

 5.3. Size:205K  infineon
irlml6344trpbf.pdf

IRLML6344GT
IRLML6344GT

IRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

 5.4. Size:145K  tysemi
irlml6344.pdf

IRLML6344GT
IRLML6344GT

Product specificationIRLML6344TRPbFHEXFET Power MOSFETVDS30 VG 1VGS Max 12 VRDS(on) max 3 D29 m(@VGS = 4.5V)S 2Micro3TM (SOT-23)RDS(on) max 37 m IRLML6344TRPbF(@VGS = 2.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsLow RDSon (

 5.5. Size:837K  cn vbsemi
irlml6344tr.pdf

IRLML6344GT
IRLML6344GT

IRLML6344TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SL3406

 

 
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