IRLR120NTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLR120NTR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.114(typ) Ohm
   Paquete / Cubierta: TO252

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IRLR120NTR Datasheet (PDF)

..1. Size:1960K cn vbsemi
irlr120ntr.pdf

IRLR120NTRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

6.1. Size:173K international rectifier
irlr120n.pdf

PD - 91541BIRLR/U120NHEXFET Power MOSFET Surface Mount (IRLR120N)D Straight Lead (IRLU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.185 Fully Avalanche RatedGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Th

6.2. Size:294K international rectifier
irlr120npbf irlu120npbf.pdf

PD - 95082AIRLR/U120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance

6.3. Size:444K infineon
auirlr120n.pdf

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

6.4. Size:270K infineon
irlr120npbf irlu120npbf.pdf

IRLR120NPbFIRLU120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 10ASadvanced processing techniques to achieve the lowest possibleon-resistance pe

6.5. Size:241K inchange semiconductor
irlr120n.pdf

isc N-Channel MOSFET Transistor IRLR120N, IIRLR120NFEATURESStatic drain-source on-resistance:RDS(on)185mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

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