IRLR120NTR MOSFET Datasheet: N-Ch, 100V, 15A. Full specification with pinout and replacement list

IRLR120NTR Specs and Replacement

Type Designator: IRLR120NTR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.114 typ Ohm

Package: TO252

IRLR120NTR substitution

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IRLR120NTR datasheet

..1. Size:1960K cn vbsemi
irlr120ntr.pdf pdf_icon

IRLR120NTR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING... See More ⇒

6.1. Size:173K international rectifier
irlr120n.pdf pdf_icon

PD - 91541B IRLR/U120N HEXFET Power MOSFET Surface Mount (IRLR120N) D Straight Lead (IRLU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.185 Fully Avalanche Rated G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Th... See More ⇒

6.2. Size:270K international rectifier
irlr120npbf irlu120npbf.pdf pdf_icon

IRLR120NPbF IRLU120NPbF HEXFET Power MOSFET l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) D l Advanced Process Technology VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.185 l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 10A S advanced processing techniques to achieve the lowest possible on-resistance pe... See More ⇒

6.3. Size:444K infineon
auirlr120n.pdf pdf_icon

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D ... See More ⇒