IRLR2908TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR2908TR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 107 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 40 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 35 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 290 pF
Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET IRLR2908TR
IRLR2908TR Datasheet (PDF)
irlr2908tr.pdf
IRLR2908TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl
irlr2908pbf irlu2908pbf.pdf
PD - 95552BIRLR2908PbFIRLU2908PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 80V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processing techniquesto achieve
auirlr2908.pdf
PD - 97734AUTOMOTIVE GRADEAUIRLR2908FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyD V(BR)DSSl Logic-Level Gate Drive 80Vl Low On-ResistanceRDS(on) typ.22.5ml 175C Operating Temperaturemax 28ml Fast SwitchingGl Fully Avalanche RatedID (Silicon Limited)39Al Repetitive Avalanche AllowedSID (Package Limited)30Aup to Tjmaxl Lead-Free,
irlr2908.pdf
PD - 94501IRLR2908AUTOMOTIVE MOSFETIRLU2908HEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 80Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 28ml Fast Switching Gl Repetitive Avalanche Allowed up to TjmaxID = 30ASDescriptionSpecifically designed for Automotive applications, this HEXFET Power MOSF
irlr2908pbf irlu2908pbf.pdf
PD - 95552BIRLR2908PbFIRLU2908PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 80V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processing techniquesto achieve
irlr2908.pdf
isc N-Channel MOSFET Transistor IRLR2908, IIRLR2908FEATURESStatic drain-source on-resistance:RDS(on)28mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV Gate-
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