Справочник MOSFET. IRLR2908TR

 

IRLR2908TR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLR2908TR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 107 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 35 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 290 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRLR2908TR

 

 

IRLR2908TR Datasheet (PDF)

 ..1. Size:823K  cn vbsemi
 irlr2908tr.pdf

IRLR2908TR IRLR2908TR

IRLR2908TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

 6.1. Size:335K  international rectifier
 irlr2908pbf irlu2908pbf.pdf

IRLR2908TR IRLR2908TR

PD - 95552BIRLR2908PbFIRLU2908PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 80V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processing techniquesto achieve

 6.2. Size:230K  international rectifier
 auirlr2908.pdf

IRLR2908TR IRLR2908TR

PD - 97734AUTOMOTIVE GRADEAUIRLR2908FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyD V(BR)DSSl Logic-Level Gate Drive 80Vl Low On-ResistanceRDS(on) typ.22.5ml 175C Operating Temperaturemax 28ml Fast SwitchingGl Fully Avalanche RatedID (Silicon Limited)39Al Repetitive Avalanche AllowedSID (Package Limited)30Aup to Tjmaxl Lead-Free,

 6.3. Size:206K  international rectifier
 irlr2908.pdf

IRLR2908TR IRLR2908TR

PD - 94501IRLR2908AUTOMOTIVE MOSFETIRLU2908HEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 80Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 28ml Fast Switching Gl Repetitive Avalanche Allowed up to TjmaxID = 30ASDescriptionSpecifically designed for Automotive applications, this HEXFET Power MOSF

 6.4. Size:335K  infineon
 irlr2908pbf irlu2908pbf.pdf

IRLR2908TR IRLR2908TR

PD - 95552BIRLR2908PbFIRLU2908PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 80V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processing techniquesto achieve

 6.5. Size:242K  inchange semiconductor
 irlr2908.pdf

IRLR2908TR IRLR2908TR

isc N-Channel MOSFET Transistor IRLR2908, IIRLR2908FEATURESStatic drain-source on-resistance:RDS(on)28mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV Gate-

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