AO3402A Todos los transistores

 

AO3402A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO3402A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1 nS

Cossⓘ - Capacitancia de salida: 54.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: SOT23

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AO3402A datasheet

 ..1. Size:1089K  umw-ic
ao3402a.pdf pdf_icon

AO3402A

R UMW UMW AO3402A N-Channel MOSFET UMW AO3402A ID V(BR)DSS RDS(on)MAX SOT-23 55 m @10V 30V 4A m 70 @4.5V 110m @2.5V DESCRIPTION 1. GATE The 3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or in PWM applicat

 8.1. Size:449K  aosemi
ao3402.pdf pdf_icon

AO3402A

AO3402 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=10V)

 8.2. Size:515K  shenzhen
ao3402.pdf pdf_icon

AO3402A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402 AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3402 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 4 A operation with gate voltages as low as 2.5V. This RDS(ON)

 8.3. Size:1020K  kexin
ao3402.pdf pdf_icon

AO3402A

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor AO3402 (KO3402) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V ID = 4 A 1 2 +0.1 +0.05 RDS(ON) 55m (VGS = 10V) 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximu

Otros transistores... IRLR3105TR , IRLR3410TR , IRLR3636TRPBF , IRLR8103VTR , IRLR8729TR , 100N03A , 30N03A , 35N06 , AON6414A , AO3403A , AO3409A , AO3413A , AO3414A , AO3416A , AO3422A , AO3423A , AO3442A .

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