AO3402A - описание и поиск аналогов

R UMW UMW AO3402A N-Channel MOSFET UMW AO3402A ID V(BR)DSS RDS(on)MAX SOT-23 55 m @10V 30V 4A m 70 @4.5V 110m @2.5V DESCRIPTION 1. GATE The 3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or in PWM applicat

AO3402 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402 AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3402 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 4 A operation with gate voltages as low as 2.5V. This RDS(ON)

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor AO3402 (KO3402) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V ID = 4 A 1 2 +0.1 +0.05 RDS(ON) 55m (VGS = 10V) 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximu

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3402 (KO3402) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) = 30V 3 ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) 1 2 +0.02 +0.1 0.15 -0.02 D 0.95 -0.1 RDS(ON) 110m (VGS = 2.5V) +0.1 1.9 -0.2 1. Gate G 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3402 (KO3402) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) = 30V 3 ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) 1 2 +0.02 +0.1 0.15 -0.02 D 0.95 -0.1 RDS(ON) 110m (VGS = 2.5V) +0.1 1.9 -0.2 1. Gate G 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3402(AO3402) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID =4A 12 +0.1 +0.05 RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 70m (VGS =4.5V) RDS(ON) 110m (VGS =2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings T

AO3402 LOW VOLTAGE MOSFET (N-CHANNEL) FEATURES Ultra low on-resistance V =30V,R 52m @V =10V,I =4A DS DS(ON) GS D For PWM application For Load switch application Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T

AO3402 SOT-23 Plastic-Encapsulate MOSFETS 30V N-Channel MOSFET SOT-23 ID V(BR)DSS RDS(on)MAX 3 m @10V 28 5A 30V m 34 @4.5V 1. GATE 2. SOURCE 1 3. DRAIN 2 Features Lead free product is acquired Surface mount package Equivalent circuit MARKING D A29T G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Reel Box Size QTY/Box Carton Size Q'TY/Carton Package Reel

AO3402 30V N-Channel Enhancement Mode MOSFET VDS (V) = 30V ID = 4 A RDS(ON)

AO3402 N-Channel Enhancement Mode MOSFET Feature 30V/4.2A RDS(ON) = 50m (MAX) @VGS = 10V. DS(ON) GS R =60m (MAX) @V = 4.5V. DS(ON) . Super High dense cell design for extremely low R Reliable and Rugged. for Surface Mount Package. SC-59 SC-59 A pplications Power Management Portable Equipment and Battery Powered Systems. TA=25 Unless Otherwise noted Absolute Maximum Ratin

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate MOSFETS AO3402 N-Channel MOSFET Features RDS(on)

AO3402 AO3402 AO3402 AO3402 SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor AO3400 AO3400 AO3400 AO3400 AO3400 FEATURES APPLI