RUMW UMW AO3402AN-Channel MOSFETUMW AO3402AID V(BR)DSS RDS(on)MAX SOT-23 55 m@10V30V 4Am70 @4.5V110m@2.5VDESCRIPTION 1. GATE The 3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or in PWM applicat

AO340230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3402 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402AO3402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3402 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 4 Aoperation with gate voltages as low as 2.5V. This RDS(ON)

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorAO3402 (KO3402)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesVDS (V) = 30VID = 4 A1 2+0.1+0.05RDS(ON) 55m (VGS = 10V) 0.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 70m (VGS = 4.5V)RDS(ON) 110m (VGS = 2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximu

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3402 (KO3402)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4 -0.1VDS (V) = 30V3ID = 4 ARDS(ON) 55m (VGS = 10V)RDS(ON) 70m (VGS = 4.5V)1 2+0.02+0.10.15 -0.02D 0.95 -0.1RDS(ON) 110m (VGS = 2.5V)+0.11.9 -0.21. GateG2. SourceS3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3402 (KO3402)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4 -0.1VDS (V) = 30V3ID = 4 ARDS(ON) 55m (VGS = 10V)RDS(ON) 70m (VGS = 4.5V)1 2+0.02+0.10.15 -0.02D 0.95 -0.1RDS(ON) 110m (VGS = 2.5V)+0.11.9 -0.21. GateG2. SourceS3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3402(AO3402)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesVDS (V) = 30VID =4A12+0.1+0.05RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 70m (VGS =4.5V)RDS(ON) 110m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings T

AO3402LOW VOLTAGE MOSFET (N-CHANNEL)FEATURES Ultra low on-resistance:V =30V,R 52m@V =10V,I =4ADS DS(ON) GS D For PWM application For Load switch application Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T

AO3402SOT-23 Plastic-Encapsulate MOSFETS30V N-Channel MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 3m@10V28 5A30Vm34 @4.5V1. GATE 2. SOURCE 13. DRAIN2FeaturesLead free product is acquiredSurface mount package Equivalent circuitMARKING D A29TG S PACKAGE SPECIFICATIONSReel DIA. Q'TY/Reel Box Size QTY/Box Carton Size Q'TY/CartonPackageReel

AO3402 30V N-Channel Enhancement Mode MOSFETVDS (V) = 30VID = 4 ARDS(ON)

AO3402N-Channel Enhancement Mode MOSFETFeature30V/4.2A RDS(ON) = 50m(MAX) @VGS = 10V.DS(ON) GSR =60m(MAX) @V = 4.5V.DS(ON) .Super High dense cell design for extremely low RReliable and Rugged.for Surface Mount Package.SC-59SC-59Applications Power ManagementPortable Equipment and Battery Powered Systems.TA=25Unless Otherwise notedAbsolute Maximum Ratin

AO3402AO3402AO3402AO3402SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorAO3400AO3400AO3400AO3400AO3400 FEATURES APPLI