AO3414A Todos los transistores

 ..1. Size:2314K  umw-ic
 ao3414a.pdf

R UMW UMW AO3414A UMW AO3414A N-Channel Enhancement MOSFET Features VDS (V) = 20V SOT 23 ID = 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V) RDS(ON) 87m (VGS = 1.8V) MARKING 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Continuous Drain TA=25 4.2 ID

 8.1. Size:425K  aosemi
 ao3414.pdf

AO3414 20V N-Channel MOSFET General Description Features General Description Features The AO3414 uses advanced trench technology to VDS = 20V The AO3414 uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V) provide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This ope

 8.2. Size:515K  shenzhen
 ao3414.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3414 AO3414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3414 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 4.2 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

 8.3. Size:1222K  kexin
 ao3414.pdf

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3414 (KO3414) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 Features 0.4 -0.1 3 VDS (V) = 20V ID = 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) 1 2 +0.1 +0.05 RDS(ON) 63m (VGS = 2.5V) 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 87m (VGS = 1.8V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings T

 8.4. Size:1178K  kexin
 ao3414-3.pdf

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3414 (KO3414) SOT-23-3 Unit mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 3 VDS (V) = 20V ID = 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) 1 2 RDS(ON) 63m (VGS = 2.5V) +0.02 D +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 87m (VGS = 1.8V) +0.1 1.9-0.2 1. Gate G 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Sym

 8.5. Size:168K  cn shikues
 ao3414.pdf

Plastic-Encapsulate MOSFET(N Encapsulate MOSFET(N-Channel) FEATURES High Power and current handing capability High Power and current handing capability Lead free product is acquired Surface Mout Package SC-59 SC-59 1 Gate 2 3 Drain Gate 2 Source MAXIMUM RATINGS (TA=25 unless otherwise noted) unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25 unless

 8.6. Size:879K  cn vbsemi
 ao3414.pdf

AO3414 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Convert