AO3414A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO3414A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6.3 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT23

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AO3414A Datasheet (PDF)

..1. Size:2314K umw-ic
ao3414a.pdf

RUMW UMW AO3414AUMW AO3414AN-Channel Enhancement MOSFETFeaturesVDS (V) = 20VSOT23 ID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)RDS(ON) 63m (VGS = 2.5V)RDS(ON) 87m (VGS = 1.8V)MARKING1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VContinuous Drain TA=25 4.2ID

8.1. Size:425K aosemi
ao3414.pdf

AO341420V N-Channel MOSFETGeneral Description FeaturesGeneral Description FeaturesThe AO3414 uses advanced trench technology to VDS = 20VThe AO3414 uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V)provide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This ope

8.2. Size:515K shenzhen
ao3414.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3414AO3414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3414 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 4.2 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

8.3. Size:1222K kexin
ao3414.pdf

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3414 (KO3414)SOT-23Unit: mm+0.12.9 -0.1+0.1Features 0.4 -0.13VDS (V) = 20VID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)1 2+0.1+0.05RDS(ON) 63m (VGS = 2.5V)0.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 87m (VGS = 1.8V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings T

8.4. Size:1178K kexin
ao3414-3.pdf

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3414 (KO3414)SOT-23-3Unit: mm+0.22.9-0.1Features+0.10.4 -0.13VDS (V) = 20VID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)1 2RDS(ON) 63m (VGS = 2.5V)+0.02D +0.10.15 -0.020.95 -0.1RDS(ON) 87m (VGS = 1.8V)+0.11.9-0.21. GateG2. SourceS3. DrainAbsolute Maximum Ratings Ta = 25Parameter Sym

8.5. Size:168K cn shikues
ao3414.pdf

Plastic-Encapsulate MOSFET(NEncapsulate MOSFET(N-Channel) FEATURES High Power and current handing capabilityHigh Power and current handing capability Lead free product is acquired Surface Mout Package SC-59 SC-59 1Gate 2 3Drain Gate 2Source MAXIMUM RATINGS (TA=25 unless otherwise noted)unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25unless

8.6. Size:879K cn vbsemi
ao3414.pdf

AO3414www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DMB53D0UDW | SMK0160D

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