AO3414A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO3414A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 4.2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6.2 nC
Время нарастания (tr): 6.3 ns
Выходная емкость (Cd): 66 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm
Тип корпуса: SOT23
AO3414A Datasheet (PDF)
ao3414a.pdf
RUMW UMW AO3414AUMW AO3414AN-Channel Enhancement MOSFETFeaturesVDS (V) = 20VSOT23 ID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)RDS(ON) 63m (VGS = 2.5V)RDS(ON) 87m (VGS = 1.8V)MARKING1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VContinuous Drain TA=25 4.2ID
ao3414.pdf
AO341420V N-Channel MOSFETGeneral Description FeaturesGeneral Description FeaturesThe AO3414 uses advanced trench technology to VDS = 20VThe AO3414 uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V)provide excellent RDS(ON), low gate charge and ID = 3A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This ope
ao3414.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3414AO3414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3414 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 4.2 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
ao3414.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3414 (KO3414)SOT-23Unit: mm+0.12.9 -0.1+0.1Features 0.4 -0.13VDS (V) = 20VID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)1 2+0.1+0.05RDS(ON) 63m (VGS = 2.5V)0.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 87m (VGS = 1.8V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings T
ao3414-3.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3414 (KO3414)SOT-23-3Unit: mm+0.22.9-0.1Features+0.10.4 -0.13VDS (V) = 20VID = 4.2A (VGS=4.5V)RDS(ON) 50m (VGS = 4.5V)1 2RDS(ON) 63m (VGS = 2.5V)+0.02D +0.10.15 -0.020.95 -0.1RDS(ON) 87m (VGS = 1.8V)+0.11.9-0.21. GateG2. SourceS3. DrainAbsolute Maximum Ratings Ta = 25Parameter Sym
ao3414.pdf
Plastic-Encapsulate MOSFET(NEncapsulate MOSFET(N-Channel) FEATURES High Power and current handing capabilityHigh Power and current handing capability Lead free product is acquired Surface Mout Package SC-59 SC-59 1Gate 2 3Drain Gate 2Source MAXIMUM RATINGS (TA=25 unless otherwise noted)unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25unless
ao3414.pdf
AO3414www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert
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