AO3423A Todos los transistores

 ..1. Size:388K  umw-ic
 ao3423a.pdf

R UMW UMW AO3423A SOT-23-3L Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET AO3423A V(BR)DSS RDS(on)MAX ID 120m @-4.5V -20 V -2A 150m @-2.5V FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices ESD Protected 2.0KV DC/DC Converter MARKING Equivalent Circuit SOT 23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 un

 8.1. Size:282K  aosemi
 ao3423.pdf

AO3423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

 8.2. Size:717K  shenzhen
 ao3423.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3423 AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -2 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON)

 8.3. Size:1760K  kexin
 ao3423.pdf

SMD Type AO3423 (KO3423) SOT-23 Unit mm +0.2 2.9-0.2 +0.1 0.4 -0.05 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.2 -0.2 D ESD Rating 2000V HBM G 1. Gate 2. Source 3. Drain S 0.4 +0.2 +0.2 2.8 -0.2 1.6 -0.1 0.55 +0.2 1.1 -0.1 +0.1 0-0.1 0.38 -0.1 SMD Type AO3423 (KO3423) Testconditions AS* SMD Type AO3423 (KO3423) 10 15 -10.0V -4.0V VDS=-5V -8

 8.4. Size:1969K  kexin
 ao3423-3.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET AO3423 (KO3423) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-2.0 A (VGS =-10V) D 1 2 RDS(ON) 92m (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 118m (VGS =-4.5V) +0.1 1.9 -0.2 RDS(ON) 166m (VGS =-2.5V) G 1. Gate 2. Source 3. Drain S Abso

 8.5. Size:2456K  anbon
 ao3423b.pdf

P-Channel MOSFET AO3423B SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0

 8.6. Size:868K  cn vbsemi
 ao3423.pdf

AO3423 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS