All MOSFET. AO3423A Datasheet

 

AO3423A MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO3423A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.2 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23

 AO3423A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO3423A Datasheet (PDF)

 ..1. Size:388K  umw-ic
 ao3423a.pdf

AO3423A AO3423A

RUMW UMW AO3423ASOT-23-3L Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFETAO3423AV(BR)DSS RDS(on)MAX ID120m@-4.5V-20 V -2A150m@-2.5VFEATUREAPPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices ESD Protected 2.0KV DC/DC ConverterMARKINGEquivalent Circuit SOT23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 un

 8.1. Size:282K  aosemi
 ao3423.pdf

AO3423A AO3423A

AO342320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3423 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

 8.2. Size:717K  shenzhen
 ao3423.pdf

AO3423A AO3423A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3423AO3423P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3423 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -2 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)

 8.3. Size:1760K  kexin
 ao3423.pdf

AO3423A AO3423A

SMD TypeAO3423 (KO3423)SOT-23Unit: mm+0.22.9-0.2+0.10.4 -0.0531 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.2-0.2D ESD Rating: 2000V HBMG 1. Gate2. Source3. DrainS 0.4+0.2+0.22.8-0.21.6-0.10.55+0.21.1-0.1+0.10-0.10.38-0.1SMD TypeAO3423 (KO3423)TestconditionsAS*SMD TypeAO3423 (KO3423)1015-10.0V-4.0VVDS=-5V-8

 8.4. Size:1969K  kexin
 ao3423-3.pdf

AO3423A AO3423A

SMD Type MOSFETP-Channel Enhancement MOSFET AO3423 (KO3423)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.0 A (VGS =-10V)D1 2 RDS(ON) 92m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 118m (VGS =-4.5V) +0.11.9 -0.2 RDS(ON) 166m (VGS =-2.5V)G1. Gate2. Source3. DrainS Abso

 8.5. Size:2456K  anbon
 ao3423b.pdf

AO3423A AO3423A

P-Channel MOSFET AO3423BSOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0

 8.6. Size:868K  cn vbsemi
 ao3423.pdf

AO3423A AO3423A

AO3423www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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