AO3442A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RUMWUMW AO3442A100V N-Channel MOSFETGeneral DescriptionThe AO3442 combines advanced trench MOSFET SOT23 technology with a low resistance package to provideextremely low RDS(ON). This device is ideal for boostconverters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlighting.Product SummaryVDS100V ID (at VGS=10V) 1A1. GATE

AO3442100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO3442 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 1Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO3442 (KO3442)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 1 A (VGS = 10V)1 2 RDS(ON) 630m (VGS = 10V)+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.1 RDS(ON) 720m (VGS = 4.5V)DD1. Gate2. Source3. DrainG GSS Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETN-Channel MOSFETAO3442 (KO3442)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 1 A (VGS = 10V)1 2 RDS(ON) 630m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 720m (VGS = 4.5V) +0.11.9-0.2DD1. Gate2. Source3. DrainG GSS Absolute Maximum Ratings Ta = 25Parameter

AO3442www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlighting