AO3442A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO3442A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.9 V
Carga de la puerta (Qg): 2.8 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 13 pF
Resistencia entre drenaje y fuente RDS(on): 0.63 Ohm
Paquete / Cubierta: SOT23
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AO3442A Datasheet (PDF)
ao3442a.pdf
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RUMWUMW AO3442A100V N-Channel MOSFETGeneral DescriptionThe AO3442 combines advanced trench MOSFET SOT23 technology with a low resistance package to provideextremely low RDS(ON). This device is ideal for boostconverters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlighting.Product SummaryVDS100V ID (at VGS=10V) 1A1. GATE
ao3442.pdf
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AO3442100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO3442 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 1Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
ao3442.pdf
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SMD Type MOSFETN-Channel MOSFETAO3442 (KO3442)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 1 A (VGS = 10V)1 2 RDS(ON) 630m (VGS = 10V)+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.1 RDS(ON) 720m (VGS = 4.5V)DD1. Gate2. Source3. DrainG GSS Absolute Maximum Ratings Ta = 25Parameter Symb
ao3442-3.pdf
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SMD Type MOSFETN-Channel MOSFETAO3442 (KO3442)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 1 A (VGS = 10V)1 2 RDS(ON) 630m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 720m (VGS = 4.5V) +0.11.9-0.2DD1. Gate2. Source3. DrainG GSS Absolute Maximum Ratings Ta = 25Parameter
ao3442.pdf
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AO3442www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlighting
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .