SI2318A Todos los transistores

 

SI2318A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI2318A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 5.8 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: SOT23

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SI2318A Datasheet (PDF)

 ..1. Size:1938K  umw-ic
si2318a.pdf

SI2318A
SI2318A

R UMW UMW SI2318ASOT-23-3L Plastic-Encapsulate MOSFETS FeaturesSOT23 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) RDS(ON) 51m (VGS = 4.5V) Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish1. GATE 2. SOURCE 3. DRAIN MARKINGEquivalent Circuit DGS Absolute Maximum Ratings Ta = 2

 8.1. Size:230K  vishay
si2318cd.pdf

SI2318A
SI2318A

New ProductSi2318CDSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 10 V TrenchFET Power MOSFET5.640 2.9 nC 100 % Rg Tested0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converte

 8.2. Size:185K  vishay
si2318ds.pdf

SI2318A
SI2318A

Si2318DSVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.045 at VGS = 10 V 3.9 TrenchFET Power MOSFET400.058 at VGS = 4.5 V 3.5APPLICATIONS Stepper Motors Load SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2318DS( C8)**Marking CodeOrdering

 8.3. Size:236K  vishay
si2318cds.pdf

SI2318A
SI2318A

New ProductSi2318CDSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 10 V TrenchFET Power MOSFET5.640 2.9 nC 100 % Rg Tested0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converte

 8.4. Size:1451K  kexin
si2318ds-3.pdf

SI2318A
SI2318A

SMD Type MOSFETN-Channel MOSFETSI2318DS (KI2318DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V)1 2 RDS(ON) 45m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 58m (VGS = 4.5V)+0.11.9 -0.21. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Paramet

 8.5. Size:1447K  kexin
si2318ds.pdf

SI2318A
SI2318A

SMD Type MOSFETN-Channel MOSFETSI2318DS (KI2318DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V) RDS(ON) 45m (VGS = 10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 58m (VGS = 4.5V) 0.1-0.01+0.11.9 -0.11. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Parameter Sy

 8.6. Size:1646K  kexin
si2318cds.pdf

SI2318A
SI2318A

SMD Type MOSFETN-Channel MOSFETSI2318CDS (KI2318CDS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V)1 2 RDS(ON) 51m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.1D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol

 8.7. Size:1519K  kexin
si2318cds-3.pdf

SI2318A
SI2318A

SMD Type MOSFETN-Channel MOSFETSI2318CDS (KI2318CDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V)1 2+0.02+0.10.15 -0.02 RDS(ON) 51m (VGS = 4.5V) 0.95 -0.1+0.11.9 -0.2D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Sy

 8.8. Size:848K  cn vbsemi
si2318ds-t1-ge3.pdf

SI2318A
SI2318A

SI2318DS-T1-GE3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT

 8.9. Size:848K  cn vbsemi
si2318cds-t1-ge3.pdf

SI2318A
SI2318A

SI2318CDS-T1-GE3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SO

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