SI2318A Todos los transistores

 ..1. Size:1938K  umw-ic
 si2318a.pdf

R UMW UMW SI2318A SOT-23-3L Plastic-Encapsulate MOSFETS Features SOT 23 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) RDS(ON) 51m (VGS = 4.5V) Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 1. GATE 2. SOURCE 3. DRAIN MARKING Equivalent Circuit D G S Absolute Maximum Ratings Ta = 2

 8.1. Size:230K  vishay
 si2318cd.pdf

New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.042 at VGS = 10 V TrenchFET Power MOSFET 5.6 40 2.9 nC 100 % Rg Tested 0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converte

 8.2. Size:185K  vishay
 si2318ds.pdf

Si2318DS Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.045 at VGS = 10 V 3.9 TrenchFET Power MOSFET 40 0.058 at VGS = 4.5 V 3.5 APPLICATIONS Stepper Motors Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2318DS( C8)* *Marking Code Ordering

 8.3. Size:236K  vishay
 si2318cds.pdf

New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.042 at VGS = 10 V TrenchFET Power MOSFET 5.6 40 2.9 nC 100 % Rg Tested 0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converte

 8.4. Size:1451K  kexin
 si2318ds-3.pdf

SMD Type MOSFET N-Channel MOSFET SI2318DS (KI2318DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V) 1 2 RDS(ON) 45m (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 58m (VGS = 4.5V) +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramet

 8.5. Size:1447K  kexin
 si2318ds.pdf

SMD Type MOSFET N-Channel MOSFET SI2318DS (KI2318DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V) RDS(ON) 45m (VGS = 10V) 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 58m (VGS = 4.5V) 0.1-0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Sy

 8.6. Size:1646K  kexin
 si2318cds.pdf

SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) 1 2 RDS(ON) 51m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol

 8.7. Size:1519K  kexin
 si2318cds-3.pdf

SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 51m (VGS = 4.5V) 0.95 -0.1 +0.1 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Sy

 8.8. Size:848K  cn vbsemi
 si2318ds-t1-ge3.pdf

SI2318DS-T1-GE3 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT

 8.9. Size:848K  cn vbsemi
 si2318cds-t1-ge3.pdf

SI2318CDS-T1-GE3 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SO