SI2318A - Даташиты. Аналоги. Основные параметры

R UMW UMW SI2318ASOT-23-3L Plastic-Encapsulate MOSFETS FeaturesSOT23 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) RDS(ON) 51m (VGS = 4.5V) Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish1. GATE 2. SOURCE 3. DRAIN MARKINGEquivalent Circuit DGS Absolute Maximum Ratings Ta = 2

New ProductSi2318CDSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 10 V TrenchFET Power MOSFET5.640 2.9 nC 100 % Rg Tested0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converte

Si2318DSVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.045 at VGS = 10 V 3.9 TrenchFET Power MOSFET400.058 at VGS = 4.5 V 3.5APPLICATIONS Stepper Motors Load SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2318DS( C8)**Marking CodeOrdering

New ProductSi2318CDSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 10 V TrenchFET Power MOSFET5.640 2.9 nC 100 % Rg Tested0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converte

SMD Type MOSFETN-Channel MOSFETSI2318DS (KI2318DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V)1 2 RDS(ON) 45m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 58m (VGS = 4.5V)+0.11.9 -0.21. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Paramet

SMD Type MOSFETN-Channel MOSFETSI2318DS (KI2318DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V) RDS(ON) 45m (VGS = 10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 58m (VGS = 4.5V) 0.1-0.01+0.11.9 -0.11. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type MOSFETN-Channel MOSFETSI2318CDS (KI2318CDS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V)1 2 RDS(ON) 51m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.1D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type MOSFETN-Channel MOSFETSI2318CDS (KI2318CDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V)1 2+0.02+0.10.15 -0.02 RDS(ON) 51m (VGS = 4.5V) 0.95 -0.1+0.11.9 -0.2D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Sy

SI2318DS-T1-GE3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT

SI2318CDS-T1-GE3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SO