FDA59N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2005 TM UniFET FDA59N25 VDS = 250V VDS(Avalanche) = 300V 250V N-Channel MOSFET RDS(on) Typ. @10V = 41m Features Description 59A, 250V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 63 nC) DMOS technology. Low Crss (typica

isc N-Channel MOSFET Transistor FDA59N25 FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 49m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

TM UniFET FDA59N30 300V N-Channel MOSFET Features Description 59A, 300V, RDS(on) = 0.056 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 77 nC) DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored to mini-

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Isc N-Channel MOSFET Transistor FDA59N30 FEATURES With To-3P package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 300