September 2005TMUniFETFDA59N25 VDS = 250VVDS(Avalanche) = 300V250V N-Channel MOSFETRDS(on) Typ. @10V = 41mFeatures Description 59A, 250V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 63 nC)DMOS technology. Low Crss (typica

isc N-Channel MOSFET Transistor FDA59N25FEATURESDrain Current : I = 59A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 49m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

TMUniFETFDA59N30300V N-Channel MOSFETFeatures Description 59A, 300V, RDS(on) = 0.056 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially tailored to mini-

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Isc N-Channel MOSFET Transistor FDA59N30FEATURESWith To-3P packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 300