CS10N70FA9R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS10N70FA9R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 34 nC
Tiempo de subida (tr): 24.8 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 1.05 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET CS10N70FA9R
CS10N70FA9R Datasheet (PDF)
cs10n70fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9R General Description VDSS 700 V CS10N70F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs10n70fa9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf
N RN-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE
jcs10n70ch jcs10n70fh.pdf
N R N-CHANNEL MOSFET JCS10N70H Package MAIN CHARACTERISTICS 10A I D 700 V VDSS Rdson-max 1.10 @Vgs=10V 38.0nC Qg-typ APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS T O-220C
cs10n70f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
