CS10N70FA9R MOSFET. Datasheet pdf. Equivalent
Type Designator: CS10N70FA9R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 24.8 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: TO220F
CS10N70FA9R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS10N70FA9R Datasheet (PDF)
cs10n70fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9R General Description VDSS 700 V CS10N70F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs10n70fa9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf
N RN-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE
jcs10n70ch jcs10n70fh.pdf
N R N-CHANNEL MOSFET JCS10N70H Package MAIN CHARACTERISTICS 10A I D 700 V VDSS Rdson-max 1.10 @Vgs=10V 38.0nC Qg-typ APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS T O-220C
cs10n70f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
