K4018 Todos los transistores

 

K4018 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: K4018

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de K4018 MOSFET

- Selecciónⓘ de transistores por parámetros

 

K4018 datasheet

 ..1. Size:252K  cn vbsemi
k4018.pdf pdf_icon

K4018

K4018 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % UIS tested 0.055 at VGS = 10 V 25 0.057 at VGS = 4.5 V 100 25 21nC 0.070 at VGS = 2.5 V 18 APPLICATIONS Primary side switch D TO-252 G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless

 0.1. Size:775K  toshiba
2sk4018.pdf pdf_icon

K4018

2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L - -MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Unit mm Applications MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 0.28 (typ.) High forward transfer admittance Yfs

 0.2. Size:79K  renesas
r07ds0215ej rjk4018dpk.pdf pdf_icon

K4018

Preliminary Datasheet RJK4018DPK R07DS0215EJ0200 (Previous REJ03G1490-0100) Silicon N Channel MOS FET Rev2.00 High Speed Power Switching Dec 03, 2010 Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Ga

 0.3. Size:355K  inchange semiconductor
2sk4018.pdf pdf_icon

K4018

isc N-Channel MOSFET Transistor 2SK4018 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

Otros transistores... TPNTS4101PT1G , UT8205AG-AG6 , ZXMN6A11ZTA-P , CS10N70FA9R , ME2310 , ME9926 , J330 , K3150 , IRF640N , MMBF170LT1G , MMDF3N04HD , MCH3409-TL , KD2306A , KD2310 , KD3400SRG , IRLU110P , IRLU3103P .

History: SGB100N042

 

 

 


History: SGB100N042

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

2sc1313 datasheet | 2sc984 | 2sa872 | 2sc1222 | 2sc2581 | c1061 transistor | 2sc1451 | c3199 transistor

 

 

↑ Back to Top
.